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Sensing Applications

Unlock the advantages of our Sensing Applications, which are designed to cater to the needs of various industries. As a leading manufacturer, distributor, supplier, trader, and retailer, we offer a range of products that are tailored to meet the requirements of our clients. Our product list includes GFAB - Graphene Foundry Service, GFET-S12 for Sensing applications, GFET-S10 for Sensing applications, GFET-S11 for Sensing applications, and GFET-S20 for Sensing applications.

Order our Sensing Applications at the lowest price and experience the extraordinary benefits they offer. Our new release, GFAB - Graphene Foundry Service, is exceptional and is designed to provide the finest results. With over 8.0 years of experience, we have established ourselves as a reliable supplier in the domestic market, catering to All India. We are also an exporter in Asia, providing our clients with the best quality products.

Our Sensing Applications are designed to provide exceptional features and advantages. They are highly sensitive and accurate, making them ideal for various sensing applications. They are also easy to use and install, making them a popular choice among our clients. Our products are reliable and durable, ensuring that they provide the best results for a long time. With our Sensing Applications, you can be assured of the finest quality and performance.

GFAB - Graphene Foundry Service

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PROCESSING SPECIFICATIONS Batch Size: from 40 cm2 to 1000s Mask: according to design rules, and can be printed by customer or Graphenea Graphene growth, transfer, processing and dicing under one roof Metallization: Cr/Au as standard. Optional wetting layers: Ni, Ti. Optional contact layers: Al, AuPd Encapsulation: polymeric, ALD Al2O3 or ALD Al2O3 +Si3N4 Minimum feature size: 5 m Dicing Get in touch for a quote QUALITY CONTROL All our samples are subjected to a rigorous QC in order to ensure a high quality products. Raman Spectroscopy inspection Optical Microscopy inspection Electrical conductivity on test structures
Price: 10000 INR/Number
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GFET-S12 for Sensing applications

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TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 Number of GFETs per chip: 27 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 ohm cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2
Price: 8000 INR/Number
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GFET-S10 for Sensing applications

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TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 ohm cm Metallization: Chromium/Gold 2/50nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150 C Maximum drain-source current density 107A.cm-2
Price: 15000 INR/Number
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GFET-S11 for Sensing applications

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TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 m Number of GFETs per chip: 31 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Dielectric Constant of the SiO2 layer: 3.9 Resistivity of substrate: 1-10 ohm cm Metallization: Chromium/Gold 5/45nm Graphene field-effect mobility: >1000 cm2/V.s Dirac point: <50 V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150C Maximum drain-source current density 107A.cm-2
Price: 8000 INR/Number
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GFET-S20 for Sensing applications

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TYPICAL SPECIFICATIONS Growth method: CVD synthesis Chip dimensions: 10 mm x 10 mm Chip thickness: 675 Number of GFETs per chip: 36 Gate oxide thickness: 90 nm Gate oxide material: SiO2 Resistivity of substrate: 1-10 ohm cm Metallization: Chromium/Gold-Palladium 2/50 nm Graphene field-effect mobility: >1000 cm2/V.s Encapsulation: 50 nm Al2O3 + 100 nm Si3N4 Dirac point (back gating): <50 V Dirac point (liquid gating): <1V Minimum working devices: >75 % ABSOLUTE MAXIMUM RATINGS Maximum gate-source voltage: 50 V Maximum temperature rating: 150C Maximum drain-source current density 107A.cm-2
Price: 20000 INR/Number
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